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| PD - 95428 IRG4BC40UPBF INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-220AB package Lead-Free C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.72V @VGE = 15V, IC = 20A n-channel Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs Absolute Maximum Ratings Parameter VCES I C @ TC = 25C I C @ TC = 100C ICM ILM VGE EARV P D @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. TO-220AB Max. 600 40 20 160 160 20 15 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1Nm) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. --------------------- Typ. -----0.50 -----2 (0.07) Max. 0.77 -----80 ------ Units C/W g (oz) www.irf.com 1 06/17/04 IRG4BC40UPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Min. 600 18 ------------VGE(th) Gate Threshold Voltage 3.0 VGE(th)/TJ Temperature Coeff. of Threshold Voltage ---gfe Forward Transconductance 11 ---ICES Zero Gate Voltage Collector Current ------IGES Gate-to-Emitter Leakage Current ---V (BR)CES V (BR)ECS Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage Typ. ------0.63 1.72 2.15 1.7 ----13 18 ------------Max. Units Conditions ---V V GE = 0V, IC = 250A ---V V GE = 0V, IC = 1.0A See Fig. 2, 5 ---- V/C V GE = 0V, IC = 1.0mA 2.1 I C = 20A VGE = 15V ---V I C = 40A ---I C = 20A, TJ = 150C 6.0 V CE = V GE, IC = 250A ---- mV/C V CE = V GE, IC = 250A ---S V CE = 100V, IC = 20A 250 V GE = 0V, VCE = 600V 2.0 A V GE = 0V, VCE = 10V, TJ = 25C 2500 V GE = 0V, VCE = 600V, TJ = 150C 100 n A V GE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. ---------------------------------------------------------Typ. 100 16 40 34 19 110 120 0.32 0.35 0.67 30 19 220 160 1.4 7.5 2100 140 34 Max. Units Conditions 150 I C = 20A 25 nC V CC = 400V See Fig. 8 60 V GE = 15V ---TJ = 25C ---ns I C = 20A, VCC = 480V 175 V GE = 15V, RG = 10 180 Energy losses include "tail" ------mJ See Fig. 10, 11, 13, 14 1.0 ---TJ = 150C, ---ns I C = 20A, VCC = 480V ---V GE = 15V, RG = 10 ---Energy losses include "tail" ---mJ See Fig. 13, 14 ---nH Measured 5mm from package ---V GE = 0V ---pF V CC = 30V See Fig. 7 --- = 1.0MHz Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. (see fig. 13a) VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 10, Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BC40UPBF 60 For both: 50 Triangular wave: I Duty cycle: 50% T J = 125C T sink = 90C Gate drive as specified Power Dissipation = 28W Load Current ( A ) 40 Square wave: 30 60% of rated voltage Clamp voltage: 80% of rated 20 I 10 Ideal diodes 0 0.1 1 10 A 100 f, Frequency (kHz) (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) Fig. 1 - Typical Load Current vs. Frequency 1000 1000 IC , Collector-to-Emitter Current (A) IC , Collector-to-Emitter Current (A) 100 100 TJ = 25C TJ = 150C TJ = 150C TJ = 25C 10 10 1 0.1 1 VGE = 15V 20s PULSE WIDTH A 10 1 4 6 8 VCC = 10V 5s PULSE WIDTH A 10 12 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics TC = 25C www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4BC40UPBF 40 V GE = 15V 2.5 VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) VGE = 15V 80s PULSE WIDTH I C = 40A 30 2.0 20 IC = 20A 1.5 10 I C = 10A 0 25 50 75 100 125 A 150 1.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TC , Case Temperature (C) TJ , Junction Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t / t 12 2. Peak TJ = PDM x Z thJC + T C P DM t 0.02 0.01 1 t2 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC40UPBF 4000 20 VGE , Gate-to-Emitter Voltage (V) V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc VCE = 400V I C = 20A 16 C, Capacitance (pF) 3000 Cies 12 2000 Coes 8 1000 Cres 4 0 1 10 A 100 0 0 20 40 60 80 100 A 120 VCE, Collector-to-Emitter Voltage (V) Qg , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1.1 Total Switching Losses (mJ) 1.0 Total Switching Losses (mJ) VCC VGE TJ IC = 480V = 15V = 25C = 20A 10 RG = 10 VGE = 15V VCC = 480V I C = 40A 0.9 I C = 20A 1 0.8 I C = 10A 0.7 0.6 0 10 20 30 40 50 A 60 0.1 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 R G , Gate Resistance ( ) TJ , Junction Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC40UPBF 4.0 3.0 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ V CC V GE = 10 = 150C = 480V = 15V 1000 VGE = 20V GE TJ = 125C 100 SAFE OPERATING AREA 2.0 10 1.0 0.0 0 10 20 30 40 A 50 1 1 10 100 1000 I C , Collector-to-Emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4BC40UPBF L 50V 1000V VC * D.U.T. RL = 0 - 480V 480V 4 X IC@25C c * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. 480F 960V d Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L Driver* 50V D.U.T. VC Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V A 1000V d e c d 90% e VC 90% 10% t d(off) Fig. 14b - Switching Loss Waveforms 10% I C 5% t d(on) tr E on E ts = (Eon +Eoff ) tf t=5s E off www.irf.com 7 IRG4BC40UPBF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 1- GATE- DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- EMITTER 3- SOURCE 4 - DRAIN HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECTOR 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMP L E : T H IS IS AN IR F 1 010 L OT COD E 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L IN E "C" IN T E R NAT ION AL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T N U MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L IN E C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/04 8 www.irf.com |
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